Selected Publication List for Laser-on-Si

35. Excitation dependence of the photoluminescence linshape in Ga(NAsP)/(GaP multiple quantum well: experiment and Monte-Carlo-simulation
V.V. Valkovskii, M.K. Shakfa, K. Jandieri, P. Ludewig, K. Volz, W. Stolz, M. Koch,
S.D. Baranovskii
J. Phys. D: Appl. Phys. 50, 025105 (2017)

34. Efficient nitrogen incorporation in GaAs using novel metal organic As-N-precursor di-tertiary-butyl-arsano-amine (DTBAA)
E. Sterzer, A. Beyer, L. Duschek, L. Nattermann, B. Ringler, B. Leube, A. Steegmüller,
R. Tonner, C. von Hänisch, W. Stolz, K. Volz,
J. Cryst. Growth 439, 19 (2016)

33. Correlation of nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on (001) Si-substrate
T. Wegele, A. Beyer, S. Gies, M. Zimprich, W. Heimbrodt, W. Stolz, K. Volz,
J. Appl. Phys. 119, 025705 (2016)

32. Interface morphology and composition of Ga(NAsP) quantum well structures for monolithically integrated lasers on silicon substrates
T. Wegele, A. Beyer, P. Ludewig, P. Rosenow, L. Duschek, K. Jnadieri, R. Tonner, W. Stolz, K. Volz,
J. Phys. D: Appl. Phys. 49, 075108 (2016)

31. Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness
M.K. Shakfa, R. Woscholski, S. Gies, T. Wegele, M. Wiemer, P. Ludewig, K. Jandieri, S. Baranovskii, W. Stolz, K. Volz, W. Heimbrodt, M. Koch,
Superl. Microstr. 93, 67 (2016)

30. Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
R. Woscholski, M.K. Shakfa, S. Gies, P. Ludewig, S. Reinhard, K. Jandieri, M. Wiemer, A. Rahimi-Iman, K. Volz, W. Stolz, S. Baranovskii, W. Heimbrodt, M. Koch
J. Appl. Phys. 119, 145707 (2016)

29. Interplay of boron localized states and electron transport in (BGa)(AsP):Te
L. Ostheim, P.J. Klar, S. Liebich, P. Ludewig, K. Volz, W. Stolz,
Semicond. Sci. Technol. 31, 07LT01 (2016)

28. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si: effects of rapid thermal annealing
R. Woscholski, M.K. Shakfa, S. Gies, M. Wiemer, A. Rahimi-Iman, M. Zimprich, S. Reinhard, K. Jandieri, S.D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch.
Thin Solid Films 613, 55 (2016)

27. MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multiquantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-subtrates
P. Ludewig, S. Reinhard, K. Jandieri, T. Wegele, A. Beyer, L. Tapfer, K. Volz, W. Stolz
J. Cryst. Growth 438, 63 (2016)

26. Metastable cubic zinc blende III/V-semiconductors: growth and structural characteristics
A. Beyer, W. Stolz, K. Volz,
Prog. Crys. Growth Charact. Mater. 61, 46 (2015)

25. Growth of III/V´s on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
K. Volz, W. Stolz, A. Dadgar, A. Krost,
Chapter 31 in „Handbook of Crystal Growth Vol. IIIA. Thin Films and Epitaxy: Basic Techniques, 2nd edition, pp. 1249-1300 Elsevier (Amsterdam, Oxford, Waltham) 2015.

24. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S.D. Baranosvkii, S.W. Koch, K. Volz, W. Stolz,
J. Appl. Phys. 118, 065701 (2015)

23. Effect of boron localized states on the conduction band transport in (BGa)P
S. Petznick, L. Ostheim, P.J. Klar, S. Liebich, K. Volz, W. Stolz
Appl. Phys. Lett. 105, 222105 (2014)

22. Annealing effects on composition and disorder effects of Ga(NAsP) quantum wells on silicon substrate for laser applications
S. Gies, M. Zimprich, T. Wegele, C. Kruska, A. Beyer, W. Stolz, K. Volz, W. Heimbrodt,
J. Cryst. Growth 402, 169 (2014)

21. Nonexponential photoluminescence transients in a Ga(NAsP) lattice matched to a (001) silicon substrate
K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S.D. Baranovskii, N. Koukourakis, N.C. Gerhardt, M.R. Hofmann,
Phys. Rev. B87, 035303 (2013)

20. Temperature-dependent quantum efficiency of Ga(NAsP) quantum wells
N. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz, S. Chatterjee,
Appl. Phys. Lett. 103, 252105 (2013)

19. Double-scale disorder in Ga(NAsP)/GaP multi quantum wells
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, K. Volz, W. Stolz, F. Gebhard, S.D. Baranosvkii, W. Heimbrodt,
J. Lumin. 133, 125 (2013)

18. Energy scaling of compositional disorder in Ga(NPAs)/GaP quantum well structures
K. Jandieri, M.K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, S.D. Baranovskii,
Phys Rev. B86, 125318 (2012)

17. High room temperature optical gain in Ga(NAsP)/Si heterostructures
N. Koukourakis, C. Bückers, D.A. Funke, N.C. Herhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S.W. Koch, M.R. Hofmann,
Appl. Phys. Lett. 100, 092107 (2012)

16. Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
N. Hossain, S.R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, S.J. Sweeney,
Appl. Phys. Lett.101, 011107 (2012)

15. Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
S. Rogowsky, M. Bäumler, M. Wolfer, L. Kirste, R. Ostendorf, J. Wagner, S. Liebich, W. Stolz, K. Volz, B. Kunert
J. Appl. Phys. 109, 053504 (2011)

14. Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate
B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz,
J. Cryst. Growth 315, 28 (2011)

13. Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
N. Hossain, S.J. Sweeney, S. Rogowski, R. Ostendorf, J. Wagner, S. Liebich, M. Zimprich,
K. Volz, B. Kunert, W. Stolz
Electron. Lett. 47, 931 (2011)

12. Laser operation of Ga(NAsP) lattice-matched to (001) Si-substrate
S. Liebich, M. Zimprich, A. Beyer, K. Volz, B. Kunert, W. Stolz, C. Lange, S. Chatterjee,
N. Hossain, S.J. Sweeney
Appl. Phys. Lett. 99, 071109 (2011)

11. Band structure properties of novel BxGa1-xP alloys for silicon integration
N. Hossain, T.J.C. Hosea, S.J. Sweeney, S. Liebich, M. Zimprich, K. Volz, B. Kunert,
W. Stolz,
J. Appl. Phys. 110, 063101 (2011)

10. Pecularities of the photoluminescence of metastable Ga(NAsP)/GaP quantum well structures
C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S.D. Baranovskii, W. Heimbrodt,
Phys. Rev. B82, 245309 (2010)

9. Annealing experiments of the GaP based dilute-nitride Ga(NAsP)
A.    Kunert, D. Trusheim, V. Voßebürger, K. Volz, W. Stolz
phys. stat. sol.(a) 205, 114 (2008)

8. Monolithic integration of Ga(NAsP)/(BGa)P multi quantum well structures on (001) silicon substrate by MOVPE
B.    Kunert,  S. Zinnkann, K. Volz, W. Stolz,
J. Cryst. Growth 310, 4776 (2008)

7. Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
J. Chamings, A.R. Adams, S.J. Sweeney, B. Kunert, K. Volz, W. Stolz
Appl. Phys. Lett. 93, 101108 (2008)

6. Morphology of interior interfaces in the novel dilute nirtide Ga(NAsP)/GaP material system
S. Oberhoff, B. Kunert, T. Torunski, K. Volz, W. Stolz
J. Cryst. Growth 298, 98 (2007)

5. MOVPE growth conditions of the novel direct band gap, dilute nitride Ga(NAsP) material system
B. Kunert, K. Volz, J. Koch, W. Stolz
J. Cryst. Growth 298, 121 (2007)

4. Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate
B. Kunert, K. Volz, J. Koch, W. Stolz
Appl. Phys. Lett. 88, 182108 (2006)

3. Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP-quantum well structures grown by metal organic vapour phase epitaxy
B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
Electron. Lett. 42, 601 (2006)

2. Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
B. Kunert, K. Volz, I. Nemeth, W. Stolz
J. Luminescence 121, 361 (2006)

1. Lasing in optically pumped Ga(NAsP)/GaP heterostructures
S. Borck, S. Chatterjee, B. Kunert, K. Volz, W. Stolz, J. Heber, W.W. Rühle, N.C. Gerhardt, M.R. Hofmann,
Appl. Phys. Lett. 89, 031102 (2006)

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